In the production process of crystalline silicon solar cells, ion implantation is a very important process. It can greatly improve the photoelectric conversion rate and achieve lean and effective application. Millennial Solar is a photovoltaic company with numerous equipment for testing cell and module performance. Its FTIR Spectrometer can measure the H content of crystalline silicon solar cells after the ion implantation process to determine whether the passivation effect meets solar cell production standards. Ultimately, the efficiency and performance of solar cells are judged. 

The Principle of Ion Implantation Process

Ion implantation is a semiconductor process that uses accelerated ion beams to inject specific elements into the surface of solar cells. The principle of the ion implantation process is to use an accelerator to accelerate the ion beam to high speed, and then guide the ion beam to the surface of the silicon wafer of the solar cell. The ion beam interacts with the surface of the cell, causing the ions to enter the surface layer of the solar cell. The injected ions replace the atoms on the surface of the solar cell with the injected ions, thereby changing the photoelectric performance of the solar cell and improving the photoelectric conversion rate of the solar cell.

Application of Ion Implantation Technology in Crystalline Silicon Solar Cells

During the ion implantation process, high-energy ions will cause certain damage to the silicon wafer lattice. This damage can be eliminated through high-temperature annealing. The annealing step can be used to simultaneously grow a thin SiO₂ layer on the surface of the silicon wafer to passivate the surface of the silicon wafer. However, in order to ensure whether the passivation condition of crystalline silicon solar cells meets the production standards of the manufacturing process, the R structure factor and H content can be calculated with one click through FTIR Spectrometer to determine the passivation effect of crystalline silicon solar cells.

Process flow comparison of conventional and ion-implanted solar cell

Advantages of Ion Implantation Technology

The emitter prepared by ion implantation can ensure good uniformity under high sheet resistance, and the annealing process can also thermally oxidize and passivate the emitter, which can reduce surface recombination loss. The emitter prepared by ion implantation can have better contact with the screen-printed electrode, which is beneficial to reducing the loss of contact resistance. Ion implantation can increase the effective light-receiving area of crystalline silicon solar cells, thereby reducing optical losses. Through the implantation dose, ion energy and annealing process of the ion implantation process, the doping level can be precisely controlled to achieve high photoelectric conversion rates of crystalline silicon solar cells.

FTIR Spectrometer

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●Calculate R structure factor and H content with one click

●Ultra-large spectral range up to 7800cm^-1~350cm^-1

●Spectral wave number accuracy is better than 1.0cm^-1, and wave number repeatability is better than 0.1cm^-1

●Imported high-sensitivity DLATGS detector, light transmittance accuracy ≤0.5T

●Save labor, easy to operate, greatly improve work efficiency

Ion implantation technology has significant application value in crystalline silicon solar cells. It can passivate the crystalline silicon solar cells, thereby effectively improving the photoelectric conversion rate of the cells, and can reduce production costs and increase production rates in large-scale production. 

FTIR Spectrometer produced by Millennial Solar can help solar cell manufacturers understand the passivation situation of cells when producing cells, and solve the passivation problems encountered in the process of making crystalline silicon solar cells based on the solutions owned by Millennial Solar!