Basic Characterization of Solar Cell
In-Line Four Point Probe Tester
Amorphous/microcrystalline Silicon Materials
Steady State Solar Simulator for Solar Cell
Analysis of Defects in Performance Test
Light Induced Degradation Test
Potential Induced Degradation Test
Reverse Current Overload Tester
Potential Induced Degradation (PID) Tester
Current Continuity Test System
The damaged layer on the surface is removed by corrosion, and the flanneling is carried out on the surface to form a pile structure to achieve the light trapping effect and reduce the reflection loss. The measurement of suede reflectance is an important means to monitor the cashmere process.
Different conductive diffusion layers are formed on silicon wafers by thermal diffusion to form PN junctions. Different types of cells will deposit a certain thickness of passivation layer between the PN junction and the silicon wafer, so as to obtain more efficient thin film solar cells. This process mainly monitors minority carrier lifetime, silicon wafer thickness and refractive index.
In order to further improve the absorption of light, a layer of anti-reflection coating is covered on the surface of silicon wafer. At present, plasma enhanced chemical vapor deposition (PECVD) is used in industry to deposit a thin film on silicon wafer, which also acts as a passivation layer. In this stage, we mainly measure the transmittance of the anti-reflection coating and the uniformity of the square resistance.
The grid electrode is screen printed on the front of the battery, and the back field and back electrode are printed on the back, and dried and sintered. In this process, temperature control, point position accuracy and grid line height-width ratio are indispensable monitoring indicators.
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