Basic Characterization of Solar Cell
In-Line Four Point Probe Tester
Amorphous/microcrystalline Silicon Materials
Steady State Solar Simulator for Solar Cell
Analysis of Defects in Performance Test
Light Induced Degradation Test
Potential Induced Degradation Test
Reverse Current Overload Tester
Potential Induced Degradation (PID) Tester
Current Continuity Test System
Content | Specification |
---|---|
Spectral range | 0-2000 cm^(-1) |
Spectral repeatability | After single crystal silicon calibration, ≤520±0.02 cm^(-1) |
Adjustable slit range | 0-2 mm; Automatically adjust the slit width |
Test platform scanning range | X×Y×Z:158*158*25 mm, can support up to 8-inch samples |
Laser | 325nm laser, laser power ≥12 mW, low wave number to ≤150 cm^(-1) |
Spectrometer | Medium-long focal length spectrometer |
UV sensitivity | The signal count of the silicon first-order peak is better than 1000 (1 second integration time) Detection conditions: using single crystal silicon wafer, wavelength 325 nm, full power, integration time 1s |
Grating | Includes two options: ≤2400 gr/mm / ≤1800 gr/mm |
Detector | TE cooled back-illuminated detector |
Chip size | ≥1 foot |
Number of pixels | ≥2048 pixels |
Visible standard objective | Includes 10X, 40X UV objective |
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